Technology | 2010.08.25
IXYS Releases the Highest Density, Highest Efficiency MOSFET Solution with Silicon Carbide Technology in an Isolated Integrated Package
BIEL, Switzerland & MILPITAS, Calif.--(BUSINESS WIRE)--IXYS Corporation (NASDAQ:IXYS) announces the successful integration of Silicon Carbide (SiC) technology and the latest super junction MOSFET technology into a single user friendly package enabling increased power density and higher efficiency in fast switching power supplies and solar inverter applications. “Currently the system designers in high frequency, high efficiency applications are forced to consider using separate discrete devices,
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